SVD10N60T - 600V N-CHANNEL MOSFET

Silan Microelectronics

SVD10N60T Datasheet Preview — Preview of SVD10N60T PDF

Datasheet Details

Part number	SVD10N60T
Manufacturer	Silan Microelectronics
File Size	586.71 KB
Description	600V N-CHANNEL MOSFET
Datasheet	SVD10N60T-SilanMicroelectronics.pdf

SVD10N60T Product details

Description

SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor dri

Features

∗ 10A,600V,RDS(on)(typ. )=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Published: Oct 20, 2014 |