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SVD10N65F, SVD10N65T Datasheet - Silan Microelectronics

SVD10N65F - 650V N-CHANNEL MOSFET

SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi.

SVD10N65F Features

* ∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD10N65T SVD10N65F SVD10N65FG Package TO-220-3L TO-220F-3L TO-220F-3L Marking SVD10N65T SVD10N65F SVD10N65FG Material Pb free Pb free Halogen

SVD10N65T-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD10N65F, SVD10N65T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD10N65F, SVD10N65T

Manufacturer:

Silan Microelectronics

File Size:

660.21 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD10N65F, SVD10N65T.
Please refer to the document for exact specifications by model.

SVD10N65F Distributor

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SVD10N65T 650V N-CHANNEL MOSFET Silan Microelectronics