SVD10N65F - 650V N-CHANNEL MOSFET
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi.
SVD10N65F Features
* ∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD10N65T SVD10N65F SVD10N65FG Package TO-220-3L TO-220F-3L TO-220F-3L Marking SVD10N65T SVD10N65F SVD10N65FG Material Pb free Pb free Halogen