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SVD1N80T, SVD1N80B Datasheet - Silan Microelectronics

SVD1N80T 800V N-CHANNEL MOSFET

SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide .

SVD1N80T Features

* ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N80M SVD1N80T SVD1N80B SVD1N80BTR SVD1N80F Package TO-251-3L TO-220-3L TO-92-3L TO-92-3L TO-220F-3L Marking SVD1N80M SVD1N80T 1N8

SVD1N80B-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD1N80T, SVD1N80B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD1N80T, SVD1N80B

Manufacturer:

Silan Microelectronics

File Size:

697.87 KB

Description:

800v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD1N80T, SVD1N80B.
Please refer to the document for exact specifications by model.

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SVD1N80T SVD1N80B 800V N-CHANNEL MOSFET Silan Microelectronics

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