SVF10N60FG
DESCRIPTION
SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF10N60T SVF10N60F SVF10N60FG SVF10N60S SVF10N60STR SVF10N60K Package TO-220-3L TO-220F-3L TO-220F-3L TO-263-2L TO-263-2L TO-262-3L Marking SVF10N60T SVF10N60F SVF10N60FG SVF10N60S SVF10N60S SVF10N60K Material Pb free Pb free Halogen free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape &Reel...
