SVF10N60FG, SVF10N60T Datasheet - Silan Microelectronics

SVF10N60FG 600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pro.

SVF10N60FG Features

* ∗ 10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF10N60T SVF10N60F SVF10N60FG SVF10N60S SVF10N60STR SVF10N60K Package TO-220-3L TO-220F-3L TO-220F-3L TO-263-2L TO-263-2L TO-262-3L Marking S

SVF10N60T-SilanMicroelectronics.pdf