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SVS5N70D - 700V DP MOS POWER TRANSISTOR

Description

SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 5A,700V, RDS(on)(typ. )=0.8@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet preview – SVS5N70D

Datasheet Details

Part number SVS5N70D
Manufacturer Silan Microelectronics
File Size 481.55 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS5N70D Datasheet
Additional preview pages of the SVS5N70D datasheet.

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Full PDF Text Transcription

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SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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