SVT041R7NT Datasheet (Silan Microelectronics)

SVT041R7NT, N-CHANNEL MOSFET

SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in

SVT041R7NT Features

* 195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 1 2 3 TO-220-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ