Datasheet4U Logo Datasheet4U.com

SVT043R0NT - N-CHANNEL MOSFET

📥 Download Datasheet

Preview of SVT043R0NT PDF
datasheet Preview Page 2 datasheet Preview Page 3

SVT043R0NT Product details

Description

2 S1 8D SVT043R0NT/L5 is an N-channel enhancement mode power MOS S2 7D field effect transistor which is produced using Silan's LVMOS 1 S3 6D technology.The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior 3 switching performance.1.Gate 2.Drain 3.Source These devices are widely used in UPS, Power Management for Inverter Systems.

Features

📁 SVT043R0NT Similar Datasheet

  • SVT10100U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100UB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT1080XB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12120U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
Other Datasheets by Silan Microelectronics
Published: |