AD500-9 - Avalanche Photodiode

Silicon Sensor

Datasheet Details

Part number	AD500-9
Manufacturer	Silicon Sensor
File Size	112.25 KB
Description	Avalanche Photodiode
Datasheet	AD500-9 Datasheet
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AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristics: quantum efficiency > 70 % at λ 890 - 915 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2µA) Temperature Coefficient of UBR Spectral Responsivity (at 905 nm; M = 100) Cut-off Frequency (-3dB; M = 100) 905 nm Rise Time (M = 100; 50 Ω) 905 nm Optimum Gain "Excess Noise" factor (M = 100) "Excess Noise" index (M = 100) Noise Current (M = 100) N.E.P. (M = 100, 905 nm) Operating Temperature Storage Temperature 0.196 mm2 ∅ 500 µm max. 5 nA typ. 0.5 - 1 nA typ. 1.2 pF 120 - 300 V typ. > 200 V typ. 1.55 V/K min. 48 A/W typ.

Published: Jan 17, 2017 |