AD500-9 Datasheet - Silicon Sensor

AD500-9 Avalanche Photodiode

AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristics: quantum efficiency > 70 % at λ 890 - 915 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2µA) Temperature Coefficient of UBR Spectral Responsivity (at 905 nm; M = 100) Cut-off Frequency (-3dB; M = 100) 905 nm Rise Time (M = 100; 50 Ω).

AD500-9-SiliconSensor.pdf