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SSM25G45EM N-channel Insulated-Gate Bipolar Transistor

Silicon Standard

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Description

SSM25G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 4.5V gate drive C C C C SO-8 G E E E Abso.

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Datasheet Specifications

Part number: SSM25G45EM
Manufacturer: Silicon Standard
File Size: 246.83 KB
Datasheet: SSM25G45EM-SiliconStandard.pdf
Description: N-channel Insulated-Gate Bipolar Transistor

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SSM25G45EM N-channel Insulated-Gate Bipolar Transistor Silicon Standard

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