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SSM28G45EM N-channel Insulated-Gate Bipolar Transistor

SSM28G45EM Description

SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate drive C C C C SO-8 G E E E Abso.

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Datasheet Details

Part number
SSM28G45EM
Manufacturer
Silicon Standard
File Size
248.10 KB
Datasheet
SSM28G45EM-SiliconStandard.pdf
Description
N-channel Insulated-Gate Bipolar Transistor

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N-channel Insulated-Gate Bipolar Transistor Silicon Standard
Silicon Standard SSM28G45EM-like datasheet