SSM28G45EM Datasheet (Silicon Standard) - N-channel Insulated-Gate Bipolar Transistor

SSM28G45EM, N-channel Insulated-Gate Bipolar Transistor

SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate drive C C C C SO-8 G E E E Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range VCE ICP G Rating 450 ±6 ±8 130 2.5 -55 to 150 -55 to 150 450V 130A C E