SST12CP11 Datasheet - Silicon Storage Technology

SST12CP11 2.4 GHz High-Power and High-Gain Power Amplifier

Date Oct 2011 * Initial release of Product Brief ISBN:978-1-61341-735-5 © 2011 Silicon Storage Technology, Inc *a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon St.

2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology Company SST12CP11 Product Brief The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essentia.

SST12CP11 Features

* easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features

* High Gain:

* Typically 34 dB gain across 2.4

* 2.5 GHz Block Diagram VCC1 VCC2 VCC3

* High linear output power (at 5V)

* >30 d

SST12CP11 Datasheet (39.94 KB)

SST12CP11 Datasheet Preview — Preview of SST12CP11 PDF

Datasheet Details

Part number:

SST12CP11

Manufacturer:

Silicon Storage Technology

File Size:

39.94 KB

Description:

2.4 ghz high-power and high-gain power amplifier.

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SST12CP11 2.4 GHz High-Power and High-Gain Power Amplifier Silicon Storage Technology

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