SST12CP11 2.4 GHz High-Power and High-Gain Power Amplifier

Silicon Storage Technology

Description

2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology Company SST12CP11 Product Brief The SST12CP11 is a high-power and high-gain .
Date Oct 2011. Initial release of Product Brief ISBN:978-1-61341-735-5 © 2011 Silicon Storage Technology, Inc. a Microchip Technolo.

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Datasheet Specifications

Part number: SST12CP11
Manufacturer: Silicon Storage Technology
File Size: 39.94 KB
Datasheet: SST12CP11-SiliconStorageTechnology.pdf
Description: 2.4 GHz High-Power and High-Gain Power Amplifier

Features

* easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features
* High Gain:
* Typically 34 dB gain across 2.4
* 2.5 GHz Block Diagram VCC1 VCC2 VCC3
* High linear output power (at 5V)
* >30 d

Applications

* with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The

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SST12CP11 2.4 GHz High-Power and High-Gain Power Amplifier Silicon Storage Technology

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