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SST12LP07 - High-Gain Power Amplifier

Datasheet Summary

Features

  • easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features.
  • High Gain:.
  • Typically 29 dB gain across 2.4.
  • 2.5 GHz over temperature 0°C to +85°C.
  • High linear output power:.
  • >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5.
  • Meets 802.11g OFDM ACPR requirement up to 22 dBm.
  • ~2.5% added EVM up to 19 dBm f.

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Datasheet preview – SST12LP07

Datasheet Details

Part number SST12LP07
Manufacturer Silicon Storage Technology
File Size 206.81 KB
Description High-Gain Power Amplifier
Datasheet download datasheet SST12LP07 Datasheet
Additional preview pages of the SST12LP07 datasheet.

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Full PDF Text Transcription

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2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP07 Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features • High Gain: – Typically 29 dB gain across 2.4–2.
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