SST12LP14C High-Gain Power Amplifier

Silicon Storage Technology

Description

2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifications .
The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

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Datasheet Specifications

Part number: SST12LP14C
Manufacturer: Silicon Storage Technology
File Size: 584.60 KB
Datasheet: SST12LP14C_SiliconStorageTechnology.pdf
Description: High-Gain Power Amplifier

Features

* High Gain:
* Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
* >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4
* Meets 802.11g OFDM ACPR requirement up to 23 dBm
* ~4% added EVM up t

Applications

* ~29%/205 mA @ POUT = 23 dBm for 802.11g
* ~27%/195 mA @ POUT = 22.5 dBm for 802.11b Single-pin low IREF power-up/-down control
* IREF

SST12LP14C Distributors

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SST12LP14C High-Gain Power Amplifier Silicon Storage Technology

Silicon Storage Technology SST12LP14C-like datasheet