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SST12LP14C - High-Gain Power Amplifier

Datasheet Summary

Description

The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

The SST12LP14C can be easily configured for high-power applications with good power-added efficiency (PAE) while operating over the 2.4- 2.5 GHz frequency band.

Features

  • High Gain:.
  • Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:.
  • >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4.
  • Meets 802.11g OFDM ACPR requirement up to 23 dBm.
  • ~4% added EVM up to 20 dBm for 54 Mbps 802.11g signal.
  • Meets 802.11b ACPR requirement up to 22.5 dBm High power-added efficiency/Low operating current for both 802.11b/g.

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Datasheet preview – SST12LP14C

Datasheet Details

Part number SST12LP14C
Manufacturer Silicon Storage Technology
File Size 573.27 KB
Description High-Gain Power Amplifier
Datasheet download datasheet SST12LP14C Datasheet
Additional preview pages of the SST12LP14C datasheet.

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Full PDF Text Transcription

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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifications FEATURES: • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4 – Meets 802.11g OFDM ACPR requirement up to 23 dBm – ~4% added EVM up to 20 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22.5 dBm High power-added efficiency/Low operating current for both 802.11b/g applications – ~29%/205 mA @ POUT = 23 dBm for 802.11g – ~27%/195 mA @ POUT = 22.5 dBm for 802.
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