SST34HF1681 Datasheet (Silicon Storage Technology) - 16M-bit Concurrent SuperFlash + SRAM Combo Memory

SST34HF1681, 16M-bit Concurrent SuperFlash + SRAM Combo Memory

The SST34HF1681 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 512K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP).

These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide

SST34HF1681 Features

* Flash Organization: 1M x16

* Dual-Bank Architecture for Concurrent Read/Write Operation

* 16 Mbit: 12 Mbit + 4 Mbit

* SRAM Organization:

* 8 Mbit: 512K x16

* Single 2.7-3.3V Read and Write Operations

* Superior Reliability

* Enduranc