SSPL2015 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

📥 Download Datasheet

SSPL2015 Datasheet Preview — Preview of SSPL2015 PDF

Datasheet Specifications

Part number: SSPL2015
Manufacturer: SilikrON Semiconductor ↗
File Size: 544.07 KB
Datasheet: SSPL2015-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSPL2015 Distributors

📁 Related Datasheet

SSPL2090 SSPL4004 SSPL5505 SSPL5508 SSPL6022 SSPL6040

📌 All Tags

SSPL2015 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

Silikron Semiconductor SSPL2015-like datasheet