SSPL2015F N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Datasheet Specifications

Part number: SSPL2015F
Manufacturer: SilikrON Semiconductor ↗
File Size: 504.32 KB
Datasheet: SSPL2015F-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* TO-220F
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSPL2015F Distributors

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SSPL2015F N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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