SSPL1022
SilikrON Semiconductor ↗
333.12kb
N-channel enhancement mode power field effect transistors. These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This adva
📁 Related Datasheet
SSPL1010 - Schottky Barrier Rectifier
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
100V
RDS(on) 8.9mohm(typ.)
ID 88A ①
Features and Benefits:
TO220
Advanced Process Technology Special des.
SSPL1042 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
100V
RDS(on) 33mohm(typ.)
ID 33A ①
Features and Benefits:
Advanced Process Technology Special designed for.
SSPL1090 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
100V 75mΩ (typ.)
ID 17A ①
Features and Benefits:
TO-220
Advanced Process Technology Special desig.
SSPL2015 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
200V
RDS(on) 0.13ohm(typ.)
ID 18A ① Features and Benefits
TO - 220
Advanced Process Technology Special des.
SSPL2015 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
200V
RDS(on) 0.13ohm(typ.)
ID 18A ①
Features and Benefits:
Advanced Process Technology Special designed fo.
SSPL2015D - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-252
Advanced Process Technology Special designe.
SSPL2015F - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-220F
Advanced Process Technology Special design.
SSPL2090 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
200V
RDS(on) 80mΩ(typ.)
ID 30A Features and Benefits
TO-220
Advanced MOSFET process technology Special des.
SSPL2090 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
200V 80mΩ(typ.)
ID 30A
TO220
Features and Benefits:
Advanced MOSFET process technology Special de.
SSPL4004 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
40V
RDS(on) 3.9mohm(typ.)
ID 180A ①
Features and Benefits
Advanced Process Technology Special designed for .