SSPL1022 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.) ID 57A .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Datasheet Specifications

Part number: SSPL1022
Manufacturer: SilikrON Semiconductor ↗
File Size: 333.12 KB
Datasheet: SSPL1022-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSPL1022 Distributors

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SSPL1022 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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