SSPL1022 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSPL1022 Description

Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.) ID 57A .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

SSPL1022 Features

* Advanced Process Technology

SSPL1022 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL1022 Datasheet Preview — Preview of SSPL1022 PDF

Datasheet Details

Part number: SSPL1022
Manufacturer: SilikrON Semiconductor ↗
File Size: 333.12 KB
Datasheet: SSPL1022-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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