Datasheet4U Logo Datasheet4U.com

SSPL1022 Datasheet, Transistors, Silikron Semiconductor

✔ SSPL1022 Features

✔ SSPL1022 Application

PDF File Details

Manufacture Logo for Silikron Semiconductor
Silikron Semiconductor manufacturer logo

Part number:

SSPL1022

Manufacturer:

SilikrON Semiconductor ↗

File Size:

333.12kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power field effect transistors. These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This adva

Datasheet Preview: SSPL1022 📥 Download PDF (333.12kb)
Page 2 of SSPL1022 Page 3 of SSPL1022

📁 Related Datasheet

SSPL1010 - Schottky Barrier Rectifier (Silikron Semiconductor)
Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.) ID 88A ① Features and Benefits: TO220  Advanced Process Technology  Special des.

SSPL1042 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics: VDSS 100V RDS(on) 33mohm(typ.) ID 33A ① Features and Benefits:  Advanced Process Technology  Special designed for.

SSPL1090 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics: VDSS RDS(on) 100V 75mΩ (typ.) ID 17A ① Features and Benefits: TO-220  Advanced Process Technology  Special desig.

SSPL2015 - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits TO - 220  Advanced Process Technology  Special des.

SSPL2015 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits:  Advanced Process Technology  Special designed fo.

SSPL2015D - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-252  Advanced Process Technology  Special designe.

SSPL2015F - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-220F  Advanced Process Technology  Special design.

SSPL2090 - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 200V RDS(on) 80mΩ(typ.) ID 30A Features and Benefits TO-220  Advanced MOSFET process technology  Special des.

SSPL2090 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Main Product Characteristics: VDSS RDS(on) 200V 80mΩ(typ.) ID 30A TO220 Features and Benefits:  Advanced MOSFET process technology  Special de.

SSPL4004 - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 40V RDS(on) 3.9mohm(typ.) ID 180A ① Features and Benefits  Advanced Process Technology  Special designed for .

TAGS

SSPL1022 N-Channel enhancement mode power field effect transistors Silikron Semiconductor
Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts