SSPL2015D N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSPL2015D Description

Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

SSPL2015D Features

* TO-252
* Advanced Process Technology

SSPL2015D Applications

* Ultra low on-resistance with low gate charge

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Datasheet Details

Part number: SSPL2015D
Manufacturer: SilikrON Semiconductor ↗
File Size: 536.92 KB
Datasheet: SSPL2015D-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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