SSPL50N30H

N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

* TO-247

* Advanced MOSFET process technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 150℃ operating temperature SSPL50N30H Marking and Pin Schematic

SSPL50N30H

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N-channel enhancement mode power field effect transistors.

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