SSPL50N30H N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSPL50N30H Description

Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSPL50N30H Features

* TO-247
* Advanced MOSFET process technology

SSPL50N30H Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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Datasheet Details

Part number: SSPL50N30H
Manufacturer: SilikrON Semiconductor ↗
File Size: 464.73 KB
Datasheet: SSPL50N30H-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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