SSPL1090 Datasheet - Silikron Semiconductor

SSPL1090 - N-Channel enhancement mode power field effect transistors

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

SSPL1090 Features

* TO-220

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSPL1090 Marking and pin Assignment Schema

SSPL1090-SilikronSemiconductor.pdf