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SSPL1010 Schottky Barrier Rectifier

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Description

Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.) ID 88A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Features

* TO220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL1010 Schottky Barrier Rectifier Silikron Semiconductor
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