SSPL1010 Datasheet - Silikron Semiconductor

SSPL1010 - Schottky Barrier Rectifier

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

SSPL1010 Features

* TO220

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSPL1010 Marking and pin Assignment Schemat

SSPL1010-SilikronSemiconductor.pdf