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SSS1206 N-Channel enhancement mode power field effect transistors

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Description

Main Product Characteristics VDSS RDS(on) 120V 4mΩ (typ.) ID 180A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Features

* TO-220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSS1206 Distributors

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SSS1206 N-Channel enhancement mode power field effect transistors Silikron Semiconductor
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