SSFD6046
Silikron
298.04kb
Mosfet. The SSFD6046 is a new generation of middle voltage N*Channel enhancement mode trench power MOSFET. This new technology increases the
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SSFD6046X - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
60V
RDS(on) 27mΩ(typ.)
ID
20A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology Sp.
SSFD6025B - 60V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
-60V
SSFD6025B
60V P-Channel MOSFET
D D
RDS(ON)
12mΩ (typ.)
G
ID
-60A
S G
Features and Benefits
TO-252 (D.
SSFD6035 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-60V
RDS(on)
31mΩ
ID
-26A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology Speci.
SSFD6035 - 60V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDS
-60V
RDS(ON) ID
40mΩ -26A
Features and Benefits
§ Advanced MOSFET process technology § Ideal for high efficiency.
SSFD6035U - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-60V
RDS(on)
23mΩ
ID
-26A
TO-252 (DPAK)
Main Features
Advanced MOSFET process technology Special design.
SSFD6976 - 65V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
V(BR)DSS
65V
RDS(ON) ID
4.5mΩ 80A
D
S G
Features and Benefits
TO-252 (DPAK)
Advanced MOSFET process technology
.
SSFD3004 - MOSFET
(Silikron)
SSFD3004
DESCRIPTION
The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a.
SSFD3005 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-30V
RDS(on) 6.3mΩ(typ)
ID
-85A
TO-252
Features and Benefits:
Advanced MOSFET process technology Special.
SSFD3006 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 3.8mΩ (typ.)
ID 90A
TO-252 (D-PAK)
Features and Benefits:
Ad.
SSFD3912 - 30V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
V(BR)DSS RDS(ON)
ID
30V 18mΩ
28A
SSFD3912
30V N-Channel MOSFET
D
S G
Features and Benefits
TO-252 (DPAK)
Advanced.
