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SSF4N60G MOSFET

SSF4N60G Description

Main Product Characteristics: VDSS RDS(on) 600V 1.85Ω (typ.) ID 4A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF4N60G Features

* TO-251
* Advanced MOSFET process technology

SSF4N60G Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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