SED3030M, SED3030M-Sino - N-Channel MOSFET

Datasheet Details

Part number	SED3030M, SED3030M-Sino
Manufacturer	Sino-IC
File Size	494.34 KB
Description	N-Channel MOSFET
Datasheet	SED3030M-Sino-IC.pdf
Note	This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino. Please refer to the document for exact specifications by model.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 30V.
RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units.

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Published: Feb 22, 2019 |