SED3030M, SED3030M-Sino N-Channel MOSFET

Description

SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General .
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

SED3030M Datasheet Preview — This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: SED3030M, SED3030M-Sino
Manufacturer: Sino-IC
File Size: 494.34 KB
Datasheet: SED3030M-Sino-IC.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junctio

SED3030M Distributors

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SED3030M-Sino N-Channel MOSFET Sino-IC

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