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SED3030M, SED3030M-Sino N-Channel MOSFET

SED3030M Description

SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General .
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

SED3030M Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junctio

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This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SED3030M, SED3030M-Sino
Manufacturer
Sino-IC
File Size
494.34 KB
Datasheet
SED3030M-Sino-IC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Sino-IC
Sino-IC SED3030M-like datasheet