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SED3030M

N-Channel MOSFET

SED3030M Features

* For a single MOSFET

* VDS = 30V

* RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junctio

SED3030M Datasheet (494.34 KB)

Preview of SED3030M PDF

Datasheet Details

Part number:

SED3030M

Manufacturer:

Sino-IC

File Size:

494.34 KB

Description:

N-channel mosfet.

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SED3030M N-Channel MOSFET Sino-IC

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