HUR820S Datasheet - Sirectifier Semiconductors

HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15..

HUR820S Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour APPLICATIONS

* Antiparallel diode for high frequency switching devices

* Antisaturation diode

* Snubb

HUR820S Datasheet (184.98 KB)

HUR820S Datasheet Preview — Preview of HUR820S PDF

Datasheet Details

Part number:

HUR820S

Manufacturer:

Sirectifier Semiconductors

File Size:

184.98 KB

Description:

High-performance wide temperature range ultra fast recovery epitaxial diode.

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HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Sirectifier Semiconductors

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