HUR830S Datasheet (Sirectifier Semiconductors) - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR830S, High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim.

A A1 b b2 c c2 D D1 Millimeter Min.

Max.

4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min.

Max.

.160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.

HUR830S Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour APPLICATIONS

* Antiparallel diode for high frequency switching devices

* Antisaturation diode

* Snubb