HUR830 Datasheet - Sirectifier Semiconductors

HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR830 VRSM V 300 VRRM V 300 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 .

HUR830 Features

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour APPLICATIONS

* Antiparallel diode for high frequency switching devices

* Antisaturation diode

* Snubb

HUR830 Datasheet (275.10 KB)

HUR830 Datasheet Preview — Preview of HUR830 PDF

Datasheet Details

Part number:

HUR830

Manufacturer:

Sirectifier Semiconductors

File Size:

275.10 KB

Description:

High-performance wide temperature range ultra fast recovery epitaxial diode.

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HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Sirectifier Semiconductors

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