SBG1030 Datasheet - Sirectifier Semiconductors

SBG1030 Low VF Schottky Barrier Rectifiers

SBG1030 thru SBG1045 www.DataSheet4U.com Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 C Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1..

SBG1030 Features

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* High surge capacity

* For use in low voltage, high frequency inverters, free whelling, and polarity protection

SBG1030 Datasheet (95.71 KB)

SBG1030 Datasheet Preview — Preview of SBG1030 PDF

Datasheet Details

Part number:

SBG1030

Manufacturer:

Sirectifier Semiconductors

File Size:

95.71 KB

Description:

Low vf schottky barrier rectifiers.

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TAGS

SBG1030 Low Schottky Barrier Rectifiers Sirectifier Semiconductors

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