SBG1040 Datasheet (Sirectifier Semiconductors) - Low VF Schottky Barrier Rectifiers

SBG1040, Low VF Schottky Barrier Rectifiers

SBG1030 thru SBG1045 www.DataSheet4U.com Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 C Dim.

A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min.

Max.

4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min.

Max.

.160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.

SBG1040 Features

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* High surge capacity

* For use in low voltage, high frequency inverters, free whelling, and polarity protection