SBG1035 Datasheet - Sirectifier Semiconductors

SBG1035 Low VF Schottky Barrier Rectifiers

SBG1030 thru SBG1045 www.DataSheet4U.com Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 C Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1..

SBG1035 Features

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* High surge capacity

* For use in low voltage, high frequency inverters, free whelling, and polarity protection

SBG1035 Datasheet (95.71 KB)

SBG1035 Datasheet Preview — Preview of SBG1035 PDF

Datasheet Details

Part number:

SBG1035

Manufacturer:

Sirectifier Semiconductors

File Size:

95.71 KB

Description:

Low vf schottky barrier rectifiers.

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SBG1035 Low Schottky Barrier Rectifiers Sirectifier Semiconductors

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