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MBR40100PT Schottky Barrier Diodes

MBR40100PT Description

MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 VDC V 100 Dimensi.

MBR40100PT Features

* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free whelling, and polarity protection

MBR40100PT Applications

* MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any Unit A A V/us V mA oC/W pF oC oC I ns t ant aneous For arw durC r Fetn - I ( )A MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes 1000 10

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Datasheet Details

Part number
MBR40100PT
Manufacturer
Sirectifier
File Size
216.11 KB
Datasheet
MBR40100PT-Sirectifier.pdf
Description
Schottky Barrier Diodes

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Schottky Barrier Diodes Sirectifier
Sirectifier MBR40100PT-like datasheet