SKD4N65F - 650V N-Channel MOSFET

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Datasheet Details

Part number: SKD4N65F
Manufacturer: SkySilicon
File Size: 805.71 KB
Datasheet: SKD4N65F-SkySilicon.pdf
Description: 650V N-Channel MOSFET

SKD4N65F Product details

Description

Application Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.2 PD TJ, TSTG Maximum Power Dissipation Junction & Storage Temperature Range TC=25°C TC=100°C 25 10 -55~150 Unit V V A W °C Thermal Characteristics Symbol Parameter Rθjc Thermal Resistance-Junction to Case Rθja Thermal Resistance-Junction to Amb

Features

S.
650V/4A RDS(ON)= 3Ω max@ VGS=10V.
Lead free and Green Device Available.
Low Rds-on to Minimize Conductive Loss.
High avalanche Current.
PIN.

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650V N-Channel MOSFET SkySilicon

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