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CDE7618-203 - Silicon Schottky Barrier Diodes

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

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Datasheet preview – CDE7618-203

Datasheet Details

Part number CDE7618-203
Manufacturer Skyworks
File Size 578.69 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet CDE7618-203 Datasheet
Additional preview pages of the CDE7618-203 datasheet.

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Full PDF Text Transcription

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DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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