DM-106B Magnetoresistance Element

Sony Corporation

Description

DM-106B Magnetoresistance Element For the availability of this product, please contact the sales office..
The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate.

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DM-106B Datasheet Preview — Preview of DM-106B PDF

Datasheet Specifications

Part number: DM-106B
Manufacturer: Sony Corporation
File Size: 101.18 KB
Datasheet: DM-106B_SonyCorporation.pdf
Description: Magnetoresistance Element

Features

* Low power consumption M-110 (Plastic) 11 mW (Typ. ) VCC=5 V
* Low magnetic field and high sensitivity 80 mVp-p (Typ. ) VCC=5 V H=8000 A/m
* High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magnetic alloy on silicon substra

Applications

* 1. Detection of revolution N S S N N S NS SN S N 2. Position detecting Circuits S N VCC r1 r2 Differenntial Amplifier 3. Bridge Circuits 106 B Output 106 B By coupling 2 pieces back to back and sticking them together in a gridge, the output voltage is doubled. Notes on Application

DM-106B Distributors

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DM-106B Magnetoresistance Element Sony Corporation

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