DM-231 - Magnetoresistance Element

Name: DM-231
SKU: DM-231-231160

Sony Corporation

Datasheet Details

DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.

Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min. ) at VCC=5 V, H=14400 A/m.
Fitted with bias magnet: stable output.
High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet).

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Published: Apr 1, 2005 |