DM-231 Magnetoresistance Element

Sony Corporation

Description

DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office..
DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.

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Datasheet Specifications

Part number: DM-231
Manufacturer: Sony Corporation
File Size: 96.46 KB
Datasheet: DM-231_SonyCorporation.pdf
Description: Magnetoresistance Element

Features

* Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min. ) at VCC=5 V, H=14400 A/m
* Fitted with bias magnet: stable output.
* High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film ci

Applications

* Non-contact angle of rotation detection.
* Contactless potentiometer. Absolute Maximum Ratings (Ta=25 °C)
* Supply voltage VCC 10
* Storage temperature Tstg
* 30 to +100 M-118 (Plastic) V °C Recommended Operating Conditions
* Supply voltage VCC 5

DM-231 Distributors

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