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DM-111A Magneto-Resistance Element

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Description

DM-111A Magneto-Resistance Element For the availability of this product, please contact the sales office..
The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate.

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Datasheet Specifications

Part number
DM-111A
Manufacturer
Sony Corporation
File Size
140.78 KB
Datasheet
DM-111A_SonyCorporation.pdf
Description
Magneto-Resistance Element

Features

* Low power consumption 38µW (Typ. ) at VCC=5V
* Low magnetic field and high sensitivity 75mVp-p (Typ. ) at VCC=5V and H=4000A/m
* High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C)
* Supply voltage VCC 10
* Op

Applications

* 1. Detection of revolution N S S N N S 2. Position detecting N S N S 3. Angular detection of rotating wheel S N N S N N S S N N 4. Readind out of analog value Electric current Electric current 5. Position detecting of revolving element N Magnetic conductors
* 4
* DM-111A Cir

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