ST9435A
Stanson Technology
398.07kb
P-channel mosfet. ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench
TAGS
📁 Related Datasheet
ST9435GP - MOSFET
(Stanson Technology)
ST9435GP
P Channel Enhancement Mode MOSFET
-15.0A
DESCRIPTION
ST9435GP is the P-Channel logic enhancement mode power field effect transistor which i.
ST9401 - P-Channel MOSFET
(Stanson Technology)
.DataSheet.in
ST9401
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transi.
ST9402 - N-Channel MOSFET
(Stanson Technology)
N Channel Enhancement Mode MOSFET
ST9402
3.6A
DESCRIPTION ST9402 is the N-Channel logic enhancement mode power field effect transistor which is prod.
ST90-125L2MI - Wet Tantalum Capacitors
(Vishay)
.vishay.
ST
Vishay
SuperTan® Wet Tantalum Capacitors with Hermetic Seal
Vishay ST represents a major breakthrough in wet tantalum capacitor t.
ST9011 - NPN Silicon Epitaxial Planar Transistor
(SEMTECH)
..
ST 9011
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into s.
ST9012 - PNP Silicon Epitaxial Planar Transistor
(SEMTECH)
..
ST 9012
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially suitable for AF-driver stag.
ST9013 - NPN Transistor
(SEMTECH)
ST 9013
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power outpu.
ST90135 - Microcontroller
(ST Microelectronics)
ST90158 - ST90135
8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM
Register File based 8/16 bit Core Architecture with RUN, WFI, SLOW.
ST9014 - NPN Transistor
(SEMTECH)
ST 9014
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into four groups, A, B, C an.
ST9015 - PNP Silicon Epitaxial Planar Transistor
(SEMTECH)
..
ST 9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivided into f.
