! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capabil
MBR140, Galaxy Microelectronics
Production specification
Schottky Power Rectifier FEATURES
z z z z Guarding for stress protection. Low forward voltage. 125℃ Operating junction tempe.
MBR140, AiT Components
AiT Components Inc.
.ait-ponents.
DESCRIPTION
The MBR120~ MBR1200 are available in SOD-123FL Package.
ORDERING INFORMATION
Package Type
P.
MBR140, CHANGZHOU ZHIDE
MBR120 THRU MBR140
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
SOD-123FL
Cathode Band Top .
MBR140ESF, ON Semiconductor
Surface Mount Schottky Power Rectifier
Plastic SOD−123 Package
MBR140ESF, NRVB140ESF
This device uses the Schottky Barrier principle with a large area.
MBR140F, Kexin
SMD Type
Schottky Diodes MBR120F ~ MBR1200F
Diodes
■ Features
● Low power loss,high efficiency ● High forward surge current capability
● The plasti.
