TP2510 Datasheet - Supertex Inc

TP2510 - P-Channel Enhancement-Mode Vertical DMOS FETs

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positiv.

TP2510 Features

* Low threshold (-2.4V max.)

* High input impedance

* Low input capacitance (125pF max.)

* Fast switching speeds

* Low on-resistance

* Free from secondary breakdown

* Low input and output leakage Applications

* Logic level interfaces -

TP2510_SupertexInc.pdf