* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices JO(ON) (min) 6.0A 6.0A Applications
VN12C
Supertex Inc
238.08 KB
N-channel enhancement-mode vertical dmos power fets.
" upertexinc. VN12C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVossl BVDGS 160V 200V ROS(ON) (max) In 1n Feat.
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