NS10N65K - Silicon N-Channel Power MOSFET
NS10N65K , the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the VDSS ID PD(TC=25℃) RDS(ON) 650 V 10 A 50 W 0.75 Ω avalanche energy.
The transistor can be used in various p
NS10N65K Features
* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge (Typical Data: 29nC)
* Low Reverse transfer capacitances(Typical: 15pF) s
* 100% Single Pulse avalanche energy Test e Applications: im
* Power switch circuit of adaptor and charger t Absolute(Tc=25℃ unles