Datasheet4U Logo Datasheet4U.com

2N6649, 2N6383 Datasheet - TAITRON

2N6649 Darlington Power Transistor

2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C The.

2N6649 Features

* High Gain Dalington Performance

* DC Current Gain hFE = 3000(Typ) @ IC = 5.0A

* True Complementary Specifications

* RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=2

2N6383-TAITRON.pdf

This datasheet PDF includes multiple part numbers: 2N6649, 2N6383. Please refer to the document for exact specifications by model.
2N6649 Datasheet Preview Page 2 2N6649 Datasheet Preview Page 3

Datasheet Details

Part number:

2N6649, 2N6383

Manufacturer:

TAITRON

File Size:

335.98 KB

Description:

Darlington power transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N6649, 2N6383.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

2N6648 PNP Silicon Power Darlington Transistors (VPT)

2N6648 PNP DARLINGTON POWER SILICON TRANSISTOR (Microsemi Corporation)

2N6648 PNP Transistor (INCHANGE)

2N6648 Darlington Power Transistor (TAITRON)

2N6648 PNP silicon power darington transistor (Central Semiconductor)

2N6649 PNP Silicon Power Darlington Transistors (VPT)

2N6649 PNP DARLINGTON POWER SILICON TRANSISTOR (Microsemi Corporation)

2N6649 PNP silicon power darington transistor (Central Semiconductor)

TAGS

2N6649 2N6383 Darlington Power Transistor TAITRON

2N6649 Distributor