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* High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(
2N6609
99.52 KB
Complementary power transistors.
NPN 2N3773
*, PNP 2N6609
Preferred Device
Complementary Silicon Power Transistors
The 2N3773 and 2N6609 are PowerBaset power transistors designed .
📁 Related Datasheet
2N6603 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N6603
JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS (Ta = 25°C Free Air Temperature)
Rating
.
2N6604 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N6604
JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS (TA = 25°C Free Air Temperature)
Rating
.
2N6609 - COMPLEMENTARY SILICON POWER TRANSITORS
(Central Semiconductor)
Central TM
Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .centralsemi.
.
2N6609 - Silicon PNP Transistor
(NTE)
2N6609
Silicon PNP Transistor Audio Amplifier Output
TO−3 Type Package
Description: The 2N6609 is a silicon PNP power transistors in a TO−3 type pack.
2N6609 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6609
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current.
2N6609 - Complementary Power Transistor
(Multicomp)
2N3773, 6609
Complementary Power Transistors
The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positione.
2N6620 - NPN SILICON TRANSISTOR
(Siemens)
.
2N6648 - PNP Silicon Power Darlington Transistors
(VPT)
2N6648 2N6649 2N6650
PNP Silicon Power Darlington Transistors
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/527 • TO-3 (TO-204AA) Pack.
