2N6383 - Darlington Power Transistor

Product Overview

TAITRON

Datasheet Details

Part number	2N6383
Manufacturer	TAITRON
File Size	335.98 KB
Description	Darlington Power Transistor
Datasheet	2N6383 Datasheet
Additional preview pages of the 2N6383 datasheet.

Product details

Description

2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range 0.25 100 0.571 1.75 -65 to +200 TO-3 2N6385 2N6650 80 80 Unit V V V A A W W/°C °C /W °C TAITRON COMPONENTS I

Features

High Gain Dalington Performance.
DC Current Gain hFE = 3000(Typ) @ IC = 5.0A.
True Complementary Specifications.
RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol.

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Other Datasheets by TAITRON

2N6648 - Darlington Power Transistor
2N6649 - Darlington Power Transistor
2N6650 - Darlington Power Transistor

Published: Jan 28, 2016 |