* High Gain Dalington Performance
* DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
* True Complementary Specifications
* RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=2
2N6650
TAITRON
335.98 KB
Darlington power transistor.
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Darlington Power Transistor
NPN: 2N6383, 2N6384, 2N6385
PNP: 2N6648, 2N6649, 2N6650
Featur.
📁 Related Datasheet
2N665 - PNP Transistor
(Motorola)
2N665 (GERMANIUM)
CASE~ (TO-3)
PNP germanium power transistor for driver and power output amplifier and power switching applications in military and.
2N6650 - PNP Silicon Power Darlington Transistors
(VPT)
2N6648 2N6649 2N6650
PNP Silicon Power Darlington Transistors
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/527 • TO-3 (TO-204AA) Pack.
2N6650 - PNP DARLINGTON POWER SILICON TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV
MAXI.
2N6650 - PNP silicon power darington transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N6653 - Bipolar NPN Device
(Seme LAB)
2N6653
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6653 - Silicon Power Transistor
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High voltage capabili.
2N6653 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage·High Switchi.
2N6654 - Bipolar NPN Device
(Seme LAB)
2N6654
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
