MMBT8050 Datasheet - TAITRON

MMBT8050 SMD General Purpose Transistor

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temp.

MMBT8050 Features

* NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8050 SOT-23 Maximum Ratings (T Ambient=25ºC unl

MMBT8050-TAITRON.pdf