MMBT8550 Datasheet - TAITRON

MMBT8550 SMD General Purpose Transistor

MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction .

MMBT8550 Features

* PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT8550 SOT-23 Maximum Ratings (T Ambient=25ºC unless

MMBT8550-TAITRON.pdf