SUB50N06-18 Datasheet (TEMIC)

SUB50N06-18, N-Channel MOSFET

TEMIC Siliconix SUP/SUB50N06-18 N-Channel Enhancement-Mode lransistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 rDS(on) (Q) 0.018 ID (A) 48 TO-220AB D o TO-263 DRAIN connected to TAB GDS ThpView SUP50N06 18 G DS ThpView SUB50N06-18 S N Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175'C) Tc=25'C Tc = 100'C Pu