B5817W Datasheet, Diode, TRANSYS

B5817W Features

• Diode Power dissipation PD: 450 mW (Tamb=25℃) Collector current IF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOD-123 Unit

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B5817W

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TRANSYS

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📄 Datasheet

Description:

Schottky barrier diode.

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B5817W

TRANSYS

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