Part number:
B5817W
Manufacturer:
TRANSYS
File Size:
58.84 KB
Description:
Schottky barrier diode.
* Power dissipation PD: 450 mW (Tamb=25℃) Collector current IF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOD-123 Unit: mm 1. 6 2. 70 3. 70 0. 55 MARKING: SJ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Para
B5817W
TRANSYS
58.84 KB
Schottky barrier diode.
📁 Related Datasheet
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• For use in low voltag.
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Production specification
Schottky Barrier Diode
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Extremely low VF. Low stored change,majority carrier
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B5817W - SCHOTTKY DIODE
(UTC)
UNISONIC TECHNOLOGIES CO., LTD B5817W
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DESCRIPTION The UTC B5817W is a schottky diode, it uses UTC’s advanced
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B5817W - SCHOTTKY DIODE
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B5817W THRU B5819W
1.80(.071) 1.40(.055)
SOD-123
1.65(.065) 1.55(.061)
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2..
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Small Signal Product
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Taiwan Semiconductor
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